Simulation of phonon-induced mobility under arbitrary stress, wafer and channel orientations and its application to FinFET technology
نویسندگان
چکیده
By applying appropriate tensor transformations for the subband solutions of electron and hole and their transport properties, we demonstrated the capability of determining the phonon induced mobility for planar and FinFET MOSFET devices under arbitrary stress, wafer and channel orientations. The electron and hole mobilities for such devices are numerically solved and their angular dependences on wafer are shown. We further investigated the mobility trend under some high index gate orientation conditions that are of interest to current 14 nm FinFET technology
منابع مشابه
Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations
To continue improvement of CMOS device performance process induced uniaxial stress is widely adopted in logic technologies starting from the 90 nm technology generation. In this work we model stress induced electron mobility enhancement in ultra thin body (UTB) MOSFETs for (001) and (110) substrate orientation using the Monte Carlo method. Uniaxial stress effects on the band structure are incor...
متن کاملImpact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study
A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...
متن کاملStudy by simulation the influence of temperature on the formation of space charge in the dielectric multilayer Under DC Electric stress
Multidielectric polyethylene is a material that is generally employed as insulation for the HVDC isolations. In this paper, the influence of temperature on space charge dynamics has been studied, low-density polyethylene (LDPE) and Fluorinated Ethylene Propylene (FEP) sandwiched between two electrodes were subjected to voltage application of 5kV (14.3 kV/mm) for extended duration of time ...
متن کاملMonte Carlo modeling of the electron mobility in strained Si 1 x Ge x layers on arbitrarily oriented Si 1 y Ge y substrates
Under strain the electronic properties of Si and SiGe significantly change. For the semiconductor industry the improvement of the kinetic properties is most interesting. In this work we present Monte Carlo modeling of the low field electron mobility in strained Si1 xGex layers grown on relaxed Si1 yGey substrates of arbitrary orientation. An analytical conduction band model is used. The valley ...
متن کاملA Qualitative Approach on FinFET Devices Characteristics
FinFET devices are comprehensively investigated owing to the projection for application in the CMOS integrated circuits fabrication. Deducing MOSFET size have great influence on electrostatic characteristic.The indiscriminate variations of the characteristics lead to a divergence effect which is imperative from the point of view of design and manufacture. In this paper different types of the po...
متن کامل